lFlash Raid 2.0, tolerating multiple Flash failure without affecting service and performance
l Latest NVMe 1.4a key features
l Data encryption, supporting a variety of encryption algorithms, and TCG2.0 enterprise specifications
l Advanced power lose protection, protects user data against power failure in various scenarios
l9 levels of energy consumption adjustable, more convenient operation and maintenance and TCO adjustment
Self-developed controller DPU600:
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DPU600 is DapuStor's latest self-developed intelligent storage SoC. Based on the latest 12nm FinFet process, DPU600 has industry-leading power consumption ratio, its 4K encoding provides superior error correction capability, and integrates computable storage platform and machine learning architecture based on ASIC acceleration. It will bring significant innovation for future storage computing system architecture. Create more value for users.
DapuStor R5 series PCIe Gen4 offers a 100% improvement in bandwidth and IOPS compared to the Haishen3 series. In terms of latency, due to the new DPU600 platform has carried out a number of optimizations on the IO path, the Roealsen5 series products have significantly improved latency and QoS under mixed read-write services.
Roealsen5 is based on KIOXIA's latest 112L 3D NAND Flash with an extremely high power efficiency ratio. Reduce NAND Retry at the system level through innovative machine learning techniques, and anticipate scenarios in complex scenarios to prevent systemic failures.
| Computing and Storage Integration Platform: |
The DPU600 has a built-in APPLICATION processor platform and DPU-Link heterogeneous computing interface. You can run Linux based on the DPU600, quickly and conveniently transplant applications and algorithms, and improve system efficiency for database, AI, and big data applications.
| Model No | R5100 | R5300 |
| Capacity(TB) | 3.84 | 7.68 | 15.36 | 3.2 | 6.4 | 12.8 |
| Outline | U.2 15mm |
| Interface Protocol | PCIe 4.0 x4, NVMe 1.4a |
| Read Bandwidth (128KB) MB/s | 7400 | 7400 | 7400 | 7400 | 7400 | 7400 |
| Write Bandwidth (128KB) MB/s | 3000 | 5700 | 7000 | 3000 | 5700 | 7000 |
| Random Read (4KB) KIOPS | 1750 | 1750 | 1750 | 1750 | 1750 | 1750 |
| Random Write (4KB) KIOPS | 170 | 280 | 300 | 340 | 550 | 540 |
| 4K Random Lantency(Typ.)R/W µs | 65/10 |
| 4K Sequential Latency (Typ.) R/W μs | 8/10 |
| Power Consumption | Active: ≤ 22 W, idle: ≤ 7 W |
| Flash Type | KIOXIA 3D NAND, 112 layer, 2 plane Enterprise TLC |
| Lifespan | 1 DWPD | 3 DWPD |
| Uncorrectable Bit Error Rate (UBER) | 1 sector per 10^17 bits read |
| Mean Time Between Failure (MTBF) | 2.5 million hours |
| Lifetime | 5 yrs |
| Model No | R5101 | R5300 |
| Capacity(TB) | 1.92 | 3.84 | 1.6 | 3.2 |
| Outline | U.2 15mm |
| Interface Protocol | PCIe 4.0 x4, NVMe 1.4a |
| Read Bandwidth (128KB) MB/s | 6200 | 7400 | 6200 | 7400 |
| Write Bandwidth (128KB) MB/s | 2600 | 5350 | 2600 | 5350 |
| Random Read (4KB) KIOPS | 1000 | 1750 | 1000 | 1750 |
| Random Write (4KB) KIOPS | 120 | 240 | 240 | 540 |
| 4K Random Lantency(Typ.)R/W µs | 65/10 |
| 4K Sequential Latency (Typ.) R/W μs | 8/10 |
| Power Consumption | Active: ≤ 12 W, idle: ≤ 6.5 W |
| Flash Type | KIOXIA 3D NAND, 112 layer, 4 plane Enterprise TLC |
| Lifespan | 1 DWPD | 3 DWPD |
| Uncorrectable Bit Error Rate (UBER) | 1 sector per 10^17 bits read |
| Mean Time Between Failure (MTBF) | 2.5 million hours |
| Lifetime | 5 yrs |
*Differences in hardware, software, or configuration will affect actual test results.